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GenX3TM 1200V IGBTs
High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching
IXGA30N120B3 IXGP30N120B3 IXGH30N120B3
VCES IC110 VCE(sat) tfi(typ)
TO-263 (IXGA)
= = =
1200V 30A 3.5V 204ns
G
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TC = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C TC = 110C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 5 Clamped Inductive Load TC = 25C
Maximum Ratings 1200 1200 20 30 60 30 150 ICM = 60 VCE VCES 300 - 55 ... +150 150 - 55 ... +150 W C C C C C Nm/lb.in. g g g Features
G = Gate E = Emitter G C E
E
V V V V A A A A TO-247 (IXGH) TO-220 (IXGP)
C (Tab)
G
CE
C (Tab)
C (Tab) C = Collector Tab = Collector
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247
300 260 1.13/10 2.5 3.0 6.0
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Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Packages Advantages
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250A, VGE = 0V IC = 250A, VCE = VGE VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V IC = 30A, VGE = 15V, Note 1 TJ = 125C TJ = 125C
Characteristic Values Min. Typ. Max. 1200 3.0 5.0 V V
High Power Density Low Gate Drive Requirement Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines
100 A 1 mA 100 2.96 2.95 3.5 nA V V
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS99730B(10/09)
IXGA30N120B3 IXGP30N120B3 IXGH30N120B3
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS RthCS Inductive load, TJ = 125C IC = 30A,VGE = 15V VCE = 0.8 * VCES,RG = 5 Notes 2 Inductive load, TJ = 25C IC = 30A, VGE = 15V VCE = 0.8 * VCES, RG = 5 Notes 2 IC = 30A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 30A, VCE = 10V, Note 1 Characteristic Values Min. Typ. Max. 11 19 1750 120 46 87 15 39 16 37 3.47 127 204 2.16 18 38 6.70 216 255 5.10 0.50 0.21 200 380 4.0 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.42 C/W C/W C/W TO-247 (IXGH) AD Outline
Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain
TO-220 (IXGP) Outline
TO-220 TO-247
Notes:
1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
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TO-263 (IXGA) Outline
Dim. A b b2 c c2 D D1 E E1 e L L1 L2 L3 L4
Millimeter Min. Max. 4.06 0.51 1.14 0.40 1.14 8.64 8.00 9.65 6.22 2.54 14.61 2.29 1.02 1.27 0 4.83 0.99 1.40 0.74 1.40 9.65 8.89 10.41 8.13 BSC 15.88 2.79 1.40 1.78 0.13
Inches Min. Max. .160 .020 .045 .016 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .190 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .005
1 = Gate 2 = Collector 3 = Emitter
1. 2. 3. 4.
Gate Collector Emitter Collector Bottom Side
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGA30N120B3 IXGP30N120B3 IXGH30N120B3
Fig. 1. Output Characteristics @ T J = 25C
60 VGE = 15V 13V 11V 200 180 160 13V 140 VGE = 15V
Fig. 2. Extended Output Characteristics @ T J = 25C
50
IC - Amperes
40
IC - Amperes
9V 30
120 100 80
11V
20 7V
9V 60 40 20 7V
10
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0 0 3 6 9 12 15 18 21 24 27 30
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ T J = 125C
60 VGE = 15V 13V 11V 1.6 VGE = 15V 1.4
Fig. 4. Dependence of VCE(sat) on JunctionTemperature
I = 60A
50
C
IC - Amperes
40 9V 30
VCE(sat) - Normalized
1.2 I 1.0
C
= 30A
20 7V 10 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.8 I 0.6 -50 -25 0 25 50 75 100 125 150
C
= 15A
VCE - Volts
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TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
8 60 7 TJ = 25C 50
Fig. 6. Input Admittance
IC - Amperes
6
VCE - Volts
I 5
C
= 60A
40
30
4
30A
20
TJ = 125C 25C - 40C
3 15A 2 6 7 8 9 10 11 12 13 14 15
10
0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
VGE - Volts
VGE - Volts
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGA30N120B3 IXGP30N120B3 IXGH30N120B3
Fig. 7. Transconductance
16 24 TJ = - 40C 14 20 25C 125C 12 VCE = 600V I C = 30A I G = 10mA
Fig. 8. Gate Charge
g f s - Siemens
VGE - Volts
16
10 8 6
12
8 4 4 2 0 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 80 90
0
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
10,000 70
Fig. 10. Reverse-Bias Safe Operating Area
f = 1 MHz Capacitance - PicoFarads
60 50
1,000
Cies
IC - Amperes
40 30 20 10 0 200
Coes 100
TJ = 125C RG = 5 dv / dt < 10V / ns
Cres 10 0 5 10 15 20 25 30 35 40
300
400
500
600
700
800
900
1000
1100
1200
VCE - Volts
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VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z (th)JC - C / W
0.10
0.01 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA30N120B3 IXGP30N120B3 IXGH30N120B3
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
18 16 14 Eoff VCE = 960V Eon 20 16 14 12 Eoff VCE = 960V Eon
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
16
---
18 16
----
14 12
TJ = 125C , VGE = 15V
RG = 5 , VGE = 15V
E on - MilliJoules
E off - MilliJoules
E off - MilliJoules
E on - MilliJoules
12 10 8 6 4 2 5 7 9 11 13 15 17 19 21 23 25 I C = 30A I
C
14 = 60A 12 10 8 6 4
10 8 6 4 2 0 15 20 25
TJ = 125C
10 8 6 4 TJ = 25C 2 0
30
35
40
45
50
55
60
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
14 12 10 Eoff VCE = 960V I C = 60A 8 6 4 2 0 25 35 45 55 65 75 85 95 105 115 10 8 6 4 2 125 Eon 16 460
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
650
----
RG = 5 , VGE = 15V
14 12
tf
420 VCE = 960V
td(off) - - - 550
TJ = 125C, VGE = 15V
t d(off) - Nanoseconds
E off - MilliJoules
t f - Nanoseconds
380 I 340
C = 60A
450
E on - MilliJoules
350
300
I
C
= 30A
250
I C = 30A
260
150
220 5 7 9 11 13 15 17 19 21 23 25
50
TJ - Degrees Centigrade
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RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
450 400 350 300 250 200 150 100 15 20 25 30 35 40 45 50 55 60 TJ = 25C 400 425
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
280
tf
VCE = 960V
td(off) - - - -
350 300 250 200 150 100 50
tf
375 VCE = 960V
td(off) - - - 250
RG = 5 , VGE = 15V
RG = 5 , VGE = 15V
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f - Nanoseconds
t f - Nanoseconds
325 I 275
C
220 = 60A, 30A 190
TJ = 125C
225
160
175
130
125 25 35 45 55 65 75 85 95 105 115
100 125
IC - Amperes
TJ - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGA30N120B3 IXGP30N120B3 IXGH30N120B3
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
180 160 140 50 110 100 90 80 46 I
C
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
30
tr
VCE = 960V
td(on) - - - = 60A
tr
VCE = 960V
td(on) - - - -
28 26 24
TJ = 125C, VGE = 15V
42
RG = 5 , VGE = 15V
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r - Nanoseconds
t r - Nanoseconds
120 100 80 60 40 20 0 5
38 34 30 26 I = 30A 22 18 14
70 60 50 40 30 20 10 0 15 20 25 30
TJ = 125C, 25C
22 20 18 16 14 12 10 8
C
7
9
11
13
15
17
19
21
23
25
35
40
45
50
55
60
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
130 26
tr
110 VCE = 960V
td(on) - - - 24
RG = 5 , VGE = 15V
t d(on) - Nanoseconds
t r - Nanoseconds
90
I C = 60A
22
70
20
50
18
30
I
C
= 30A
16
10 25 35 45 55 65 75 85 95 105 115
14 125
TJ - Degrees Centigrade
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_30N120B3(4A)10-06-09-A

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